Sang-Hoon Bae, Hyunseok Kim, Sangho Lee, Kuangye Lu, and Jeehwan Kim

Mechanical Engineering, Massachusetts Institute of Technology

 

Remote epitaxy is a recently discovered method to grow single-crystalline thin films on graphene, wherein the grown film can be exfoliated at the graphene interface to form freestanding membranes. Here, we present our recent development on remote epitaxy of III-V semiconductors. We show that directly growing graphene on III-V substrates is an ideal pathway that can eliminate transfer process-related defects and can realize wafer-scale process of remote epitaxy and substrate reuse. We also show advanced remote epitaxial platforms and optoelectronic applications enabled by remote epitaxy.