J.-H. Park1,2, H. M. Kwak1, X. Yang2, J.-Y. Lee1, M.-D. Park1, S.-Y. Bae3, H. Amano2*,

D. S. Lee1,*

1School of Electrical Engineering and Computer Science (EECS),Gwangju Institute of Science and Technology (GIST)

2Institute of Materials and Systems for Sustainability (IMaSS),Nagoya University

3Energy Materials Center,Korea Institute of Ceramic Engineering and Technology (KICET)

 

III-Nitride Epitaxy using two-dimensional(2-D) materials can overcome lattice mismatch and thermal expansion coefficient differences between substrates and growth materials. One of this method, remote epitaxy, can also reduce the threading dislocation of the III-Nitride material and the grown epilayer can be separated due to a weak chemical bonding between the epilayer and the 2-D material. However, it has been very challenging to realize it in III-nitrides. One of the most popular 2-D substances, graphene, has been reported to be damaged or even lost during III-Nitride growth. Considering that a high quality gallium nitride (GaN) layer is grown at a temperature as high as ~1050 ℃ using hydrogen carrier, graphene damage on graphene/GaN cannot but be a serious problem in adopting the remote epitaxy. Previous reports have proposed several different mechanisms to cause the graphene damage including hydrogen atom reacting with carbon in graphene, Ga droplet reacting with graphene, and so on. We found that graphene is stable on substrates containing oxygen atom such as sapphire but it was unstable over the substrate’s decomposition temperature on GaN and AlN substrate. Here, we report the stability of graphene on III-nitrides at various growth temperatures on various substrates. We will discuss more on the possible mechanism for the graphene loss and efforts to make it possible to realize GaN remote epitaxy on graphene/III-nitrides template.