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Realization of transition metal dichalcogenide embedding microcavity via remote epitaxy

Jinkyoung Yoo

Center for Integrated Nanotechnologies (CINT), Los Alamos National Laboratory

Remote epitaxy enables us to fabricate material architectures, in which material compatibility issues are overcome, for basic sciences and device applications. However, remote epitaxy is still limited to a few materials with graphene. In the presentation experimental demonstration and theoretical explanation of conventional semiconductor/monolayer transition metal dichalcogenide will be discussed. Realization of the novel heterostructures by remote epitaxy leads us to explore basic components of optoelectronic devices, such as microcavities and waveguides.

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