Heterogeneous integration of a diverse array of materials and devices on to a single platform is of growing interest to produce more compact and capable electronics systems. Integration at the chipletlevel has proven successful, improving power and performance, while reducing area, design time and fabrication costs. By isolating just the thin active layers and bonding them to a common substrate, evencloser integration can be achieved further improving the size, weight, and power (SWAP). However,isolation of the active material layer from the growth substrate is typically achieved using a combinationof various materials specific methods. Van der Waals surfaces, such as graphene or hBN, offer a unique route to growth, transfer and integration of a wide variety of thin high quality electronic materials and devices. Here we will discuss the use of two dimensional boron nitride on sapphire templates for growth of III-nitrides, oxides and other electronic films. Some key growth challenges, including nucleation, template morphology and stability, and strain will be covered with the goal of achieving high quality films that can be easily lifted off and transferred. We will also highlight the use of spalling induced liftoff which could enable integration of large area circuits as well as individual devices.