Expanding SiC power device market requires lowering wafer prices for the majority of device costs. In this talk, the author reports the application of remote epitaxy technology to alternative substrate with epi-membrane. SiC remote epitaxy needs high growth temperature with hot-wall chemical vapor deposition around 1873 K, which is a harsh environment for graphene survival. By replacing the carrier gas from hydrogen to argon, graphene etching was suppressed and peeling was successful. The author believes this approach represents a significant step toward the fabrication of high quality and low cost substrate with epi.