Pauline Hauchecorne1, Mickaël Martin（1）, Carlos Alvarez（2）, Edith Bellet-Amalric（2）, Hanako Okuno（2）, Pascal Pochet（2）, Sylvain David（1）, Jeremy Moeyaert（1）, Farzan Gity（4）, Shubhadeep Bhattacharjee（4）, Paul K. Hurley（4）, Bérangère Hyot（3）, Thierry Baron（1）

（1）Univ. Grenoble Alpes, LTM, F-38000 Grenoble, France and CNRS, LTM, F-38054 Grenoble, France

（2）Univ. Grenoble Alpes, F-38000 Grenoble, France and CEA/IRIG, F-38054, Grenoble, France

（3）Univ. Grenoble Alpes, F-38000 Grenoble, France and CEA-Leti Minatec, F-38054, Grenoble, France

（4）Tyndall National Institute, University College Cork, Cork T12 R5CP, Ireland

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III-VI materials are an emerging class of layered semiconductors with very interesting electrical and optical properties due to its direct band gap for several monolayers. High performance field effect transistors1, photodetectors2, light emitters3 have already been demonstrated using exfoliated materials. Further integration compatible with CMOS processes required the development of large scale fabrication method of monocrystalline material.

   We present a status of large scale elaboration by MOCVD of GaSe and InSe on silicon substrates. Growth mechanisms at the atomic scale will be discussed from experimental results obtained for 2D layers as well as nano-objects such as nanoribbons grown by vapour-liquid-solid growth. The material is characterized by AFM, HR-STEM, Raman spectroscopy, TEM cross-sectional observations coupled with EDX analyses. Test devices are made by contacting individual nanoribbon and I(V) characteristics will be presented.

 

[1]Li, M.; Lin, C.-Y.; Yang, S.-H.; Chang, Y.-M.; Chang, J.-K.; Yang, F.-S.; Zhong, C.; Jian, W.-B.; Lien, C.-H.; Ho, C.-H.; Liu, H.-J.; Huang, R.; Li, W.; Lin, Y.-F.; Chu. Adv. Mater. 2018, 0, 1803690.

[2]Yan, F.; Zhao, L.; Patanè, A.; Hu, P.; Wei, X.; Luo, W.; hang, D.; Lv, Q.; Feng, Q.; Shen, C. et al. Nanotechnology 2017, 28, 27LT01.

[3]Bandurin, D. A.; Tyurnina, A. V.; Geliang, L. Y.; Mishchenko, A.; Zólyomi, V.; Morozov, S. V.; Kumar, R. K.; Gorbachev, R. V.; Kudrynskyi, Z. R.; Pezzini, S. Nat. Nanotechnol. 2017, 12, 223– 227.